Holiday
DELTA台達215 M7M8W7
Introduction of detailed investigation of the basic principles of 'unit' processes used in the fabrication of solid-state devices and integrated circuits for silicon based electronics and beyond. Emphasis is placed on the fundamental aspects of lithography, film deposition, wet etching, anisotropic dry etching, crystal growth, ion implantation, and chemical vapor deposition of metals and insulators.
Instructor: Dr. Chao-Hui Yeh - Office: Delta R825 - Tel.: 03-5162173 - Email: chyeh@ee.nthu.edu.tw - Office hour: by appointment A. Course Description: Introduction of Detailed investigation of the basic principles of 'unit' processes used in the fabrication of solid-state devices and integrated circuits for silicon based electronics and beyond. Emphasis is placed on the fundamental aspects of lithography, film deposition, wet etching, anisotropic dry etching, crystal growth, ion implantation, and chemical vapor deposition of metals and insulators. B. Text Books: 1. Silicon VLSI Technology, Fundamentals, Practice and Modeling, J. D. Plummer, M.D. Deal, and P.B. Griffin, Prentice-Hall, 2000, ISBN: 0-13-085037-3. C. Reference book: 1. Fundamentals of Semiconductor Fabrication, G. S. May, S. M. Sze, Wiley, 2003 ISBN: 978-0-471-23279-7 2. Semiconductor Devices: Physics and Technology 3/E, S. M. Sze, M.-K. Lee, Wiley, 2012 3. Semiconductor Manufacturing Technology, M. Quirk and J. Serda, Prentice Hall, 2001. 4. Semiconductor Physics & Devices Basic Principles 4/E(IE), D. A. Neamen, McGrawHill 2012, ISBN:978-0-071-08902-9 D. Teaching Method 1. In Chinese (~80%)/English (~20%) 2. Power point slides will be uploaded in the e-learning system before we start the chapter. E. Syllabus Chapter 1 Introduction and Historical Perspective Chapter 2 Modern CMOS/Device Technology Chapter 3 Crystal Growth, Wafer Fabrication and Basic Properties of Silicon Wafers Chapter 4 Semiconductor Manufacturing Chapter 5 Lithography Chapter 6 Thermal Oxidation Chapter 7 Diffusion Chapter 8 Ion Implantation Chapter 9 Thin Film Deposition Chapter 10 Etching Chapter 11 Back-End Technology F. Evaluation Midterm-I 20% Midterm-II 20% Final 20% Homework 20% Simulation Project 20%
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Average GPA 3.6
Std. Deviation 0.69
平均GPA 3.8
標準差 0.94
平均GPA 3.91
標準差 0.8
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